| Product Type | Representative Model | Core Thermal Conductivity | Processing Conditions | Compatible Scenarios |
| Epoxy Conductive Silver Adhesive | JOM6934 | 2.6W/m·K | Regular Oven Curing | High-power LEDs, ordinary ICs, transistors, small sensors |
| Low-Temperature Rapid-Curing Chip Adhesive | JOME6688 | – | 110℃/90s or 120℃/60s | Camera Modules, CMOS, Smart Cards, Photoelectric Modules |
| UV-Curing Bonding Adhesive | JM8303 | Micro LEDs, Automotive Displays, Camera Modules, Fingerprint Recognition Chips | Automotive MCUs, QFN/QFP Packaging, Automotive Lidar Driver Chips | |
| Vehicle-Grade High-Reliability Epoxy Adhesive | JOME621 | ≥9W/m·K | Passed MSL1 Level Moisture Sensitivity Test | Automotive Microcontrollers, Power Device Packaging |
| Parameter item | General insulating bonding adhesive | High-power LED insulating silicone | Advanced packaging low-stress insulating adhesive |
| Viscosity (25℃) | ≤10000 MPa·s | 12500±1000 cps | 10.5 Pa·s |
| Volume resistivity | ≥10¹⁵ Ω·cm | 1.2×10¹⁵ Ω·cm | ≥10¹⁴ Ω·cm |
| Shear strength | ≥4.1 MPa（6000psi） | ≥13.8 MPa（2000psi） | 26.4 MPa |
| Thermal conductivity | ≥0.6 W/m·K | 0.9 W/m·K | ≥1.5 W/m·K |
| Curing conditions | 170℃ 2h | 150~160℃ 90min | 110℃ 90s / 120℃ 60s |
| Shore hardness | ≥80 D | 82 D | Low elastic modulus |
| 2mm×2mm chip at 25℃ force | ≥6000 g | ≥7000 g | ≥8000 g |
| 2mm×2mm chip at 160℃ force | ≥2000 g | ≥2500 g | ≥3000 g |
| Typical application scenarios | Low-power IC, MEMS | High-power LED ceramic holder | Camera module, ultra-thin chip stacking |
| Parameter item | General-purpose LED conductive silver paste | Automotive-grade high thermal conductivity conductive paste | Semi-baked nano-silver paste |
| Viscosity (at 25℃) | 100~300 Pa·s | 80~200 Pa·s | 50~150 Pa·s |
| Solid content (silver percentage) | 70%~90% | ≥85% | ≥95% |
| Volume resistivity | ≤10⁻⁶ Ω·cm | ≤5×10⁻⁷ Ω·cm | ≤1×10⁻⁸ Ω·cm |
| Shear strength | ≥10 MPa | ≥15 MPa | ≥20 MPa |
| Heat conductivity | ≥20 W/m·K | ≥9 W/m·K | 100~326 W/m·K |
| Curing conditions | 80~150℃ 30min~2h | 120~170℃ 1~2h | 130℃ 30~60min |
| Thixotropy index | ≥5.5 | ≥6.0 | ≥4.5 |
| Glass transition temperature | ≥150℃ | ≥170℃ | ≥200℃ |
| Typical adaptation scenario | Common LED discrete components | Automotive MCUs, power devices | Third-generation semiconductors, optical communication chips |